โดย Passapong Wutimakun, Kaman Chaivanich, Theerachol Mahawan, Thongkam Chumpol, Winat Intarasuwan, and Chumpol Buteprongjit
ปี 2011
Abstract
A long-wavelength infrared thermal imaging camera was applied to visually evaluate the thermal influence of defects in SiC substrates. Defects in substrates were rapidly and effectively detected by IR camera observation, and the dependence of the temperature on the defect size could be observed precisely. IR camera was applied to show clearly the change in heat propagation in areas of defects in SiC substrates by observation of temperature distribution images in real time. Consequently, the IR camera can be considered as an effective technique for evaluating the thermal influence of defects.